IRF8707GPBF MOSFET Transistor

The IRF8707GPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8707GPBF transistor as follows.

IRF8707GPBF Transistor Specification

Transistor Code		IRF8707GPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0119Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.9nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		6.2nC

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