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IRF8513 MOSFET Transistor

The IRF8513 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8513 transistor as follows.

Circuit diagram symbol of the IRF8513 transistor

IRF8513 Transistor Specification

Transistor Code IRF8513
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0155Ohm
Power Dissipation (Maximum) PD 1.5W

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