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IRF840ALPBF MOSFET Transistor

The IRF840ALPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF840ALPBF transistor as follows.

Circuit diagram symbol of the IRF840ALPBF transistor

IRF840ALPBF Transistor Specification

Transistor Code IRF840ALPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-262
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.85Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 155pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 38nC

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