IRF8113PBF-1 MOSFET Transistor

The IRF8113PBF-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8113PBF-1 transistor as follows.

IRF8113PBF-1 Transistor Specification

Transistor Code		IRF8113PBF-1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.9nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		24nC

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