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IRF8010PBF MOSFET Transistor

The IRF8010PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8010PBF transistor as follows.

Circuit diagram symbol of the IRF8010PBF transistor

IRF8010PBF Transistor Specification

Transistor Code IRF8010PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 260W
Drain-Source Capacitance 480pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 130nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 81nC

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