IRF8010PBF MOSFET Transistor

The IRF8010PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF8010PBF transistor as follows.

IRF8010PBF Transistor Specification

Transistor Code		IRF8010PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	260W
Drain-Source Capacitance		480pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		130nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		81nC

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