IRF7902PBF MOSFET Transistor

The IRF7902PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7902PBF transistor as follows.

IRF7902PBF Transistor Specification

Transistor Code		IRF7902PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0226Ohm
Power Dissipation (Maximum)	PD	1.4W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.2nS
Gate-Threshold Voltage (Maximum)		2.25V
Total Gate Charge		4.6nC

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