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IRF7855PBF MOSFET Transistor

The IRF7855PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7855PBF transistor as follows.

Circuit diagram symbol of the IRF7855PBF transistor

IRF7855PBF Transistor Specification

Transistor Code IRF7855PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.094Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 440pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 4.9V
Total Gate Charge 26nC

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