IRF7834 MOSFET Transistor

The IRF7834 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7834 transistor as follows.

IRF7834 Transistor Specification

Transistor Code		IRF7834
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		810pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.3nS
Gate-Threshold Voltage (Maximum)		2.25V
Total Gate Charge		29nC

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