IRF7832PBF MOSFET Transistor

The IRF7832PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7832PBF transistor as follows.

IRF7832PBF Transistor Specification

Transistor Code		IRF7832PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		990pF
Operating Junction Temperature (Maximum)		155°C
Rise Time		6.7nS
Gate-Threshold Voltage (Maximum)		2.32V
Total Gate Charge		34nC

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