IRF7832 MOSFET Transistor

The IRF7832 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7832 transistor as follows.

IRF7832 Transistor Specification

Transistor Code		IRF7832
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		990pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.3nS
Gate-Threshold Voltage (Maximum)		2.35V
Total Gate Charge		34nC

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