IRF7828PBF MOSFET Transistor

The IRF7828PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7828PBF transistor as follows.

IRF7828PBF Transistor Specification

Transistor Code		IRF7828PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.7nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		9.2nC

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