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IRF7821 MOSFET Transistor

The IRF7821 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7821 transistor as follows.

Circuit diagram symbol of the IRF7821 transistor

IRF7821 Transistor Specification

Transistor Code IRF7821
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0091Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 360pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.7nS
Gate-Threshold Voltage (Maximum) 1V

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