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IRF7820PBF MOSFET Transistor

The IRF7820PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7820PBF transistor as follows.

Circuit diagram symbol of the IRF7820PBF transistor

IRF7820PBF Transistor Specification

Transistor Code IRF7820PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.078Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 90pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3.2nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 29nC

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