IRF7815PBF MOSFET Transistor

The IRF7815PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7815PBF transistor as follows.

IRF7815PBF Transistor Specification

Transistor Code		IRF7815PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.043Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		129pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.2nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		25nC

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