IRF7809 MOSFET Transistor

The IRF7809 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7809 transistor as follows.

IRF7809 Transistor Specification

Transistor Code		IRF7809
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	3.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V

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