IRF7807VD1PBF MOSFET Transistor

The IRF7807VD1PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7807VD1PBF transistor as follows.

IRF7807VD1PBF Transistor Specification

Transistor Code		IRF7807VD1PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.2nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		9.5nC

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