IRF7799L2TR1PBF MOSFET Transistor

The IRF7799L2TR1PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7799L2TR1PBF transistor as follows.

IRF7799L2TR1PBF Transistor Specification

Transistor Code		IRF7799L2TR1PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	4.3W
Drain-Source Capacitance		606pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		33.5nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		110nC

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