IRF7769L1 MOSFET Transistor

The IRF7769L1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7769L1 transistor as follows.

IRF7769L1 Transistor Specification

Transistor Code		IRF7769L1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIRECTFET
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	3.3W
Drain-Source Capacitance		1240pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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