IRF7755GPBF MOSFET Transistor

The IRF7755GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7755GPBF transistor as follows.

IRF7755GPBF Transistor Specification

Transistor Code		IRF7755GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.051Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		182pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		11nC

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