IRF7754GPBF MOSFET Transistor

The IRF7754GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7754GPBF transistor as follows.

IRF7754GPBF Transistor Specification

Transistor Code		IRF7754GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		618pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		22nC

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