IRF7707 MOSFET Transistor

The IRF7707 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7707 transistor as follows.

IRF7707 Transistor Specification

Transistor Code		IRF7707
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		512pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		31nC

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