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IRF7705PBF MOSFET Transistor

The IRF7705PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7705PBF transistor as follows.

Circuit diagram symbol of the IRF7705PBF transistor

IRF7705PBF Transistor Specification

Transistor Code IRF7705PBF
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSSOP-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 418pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 58nC

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