IRF7704GPBF MOSFET Transistor

The IRF7704GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7704GPBF transistor as follows.

IRF7704GPBF Transistor Specification

Transistor Code		IRF7704GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.046Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		360nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		25nC

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