IRF7703GPBF MOSFET Transistor

The IRF7703GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7703GPBF transistor as follows.

IRF7703GPBF Transistor Specification

Transistor Code		IRF7703GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Transistor SMD Code		F7703G
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		416pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		405nS
Gate-Threshold Voltage (Maximum)		3V

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