IRF7702PBF MOSFET Transistor

The IRF7702PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7702PBF transistor as follows.

IRF7702PBF Transistor Specification

Transistor Code		IRF7702PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Transistor SMD Code		7702
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		1040pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		1.2V

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