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IRF7702 MOSFET Transistor

The IRF7702 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7702 transistor as follows.

Circuit diagram symbol of the IRF7702 transistor

IRF7702 Transistor Specification

Transistor Code IRF7702
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSSOP8
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 1.5W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 54nC

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