IRF7702 MOSFET Transistor

The IRF7702 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7702 transistor as follows.

IRF7702 Transistor Specification

Transistor Code		IRF7702
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	1.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		54nC

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