IRF7700GPBF MOSFET Transistor

The IRF7700GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7700GPBF transistor as follows.

IRF7700GPBF Transistor Specification

Transistor Code		IRF7700GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Transistor SMD Code		F7700G
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		880pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		1.2V

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