IRF7663PBF MOSFET Transistor

The IRF7663PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7663PBF transistor as follows.

IRF7663PBF Transistor Specification

Transistor Code		IRF7663PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1.8W
Drain-Source Capacitance		615pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		30nC

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