IRF7663 MOSFET Transistor

The IRF7663 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7663 transistor as follows.

IRF7663 Transistor Specification

Transistor Code		IRF7663
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1.8W
Drain-Source Capacitance		2520pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.2V

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