IRF7603PBF MOSFET Transistor

The IRF7603PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7603PBF transistor as follows.

IRF7603PBF Transistor Specification

Transistor Code		IRF7603PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MICRO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	1.8W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		18nC

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