IRF7601 MOSFET Transistor

The IRF7601 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7601 transistor as follows.

IRF7601 Transistor Specification

Transistor Code		IRF7601
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	1.8W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.7V
Total Gate Charge		14nC

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