IRF7524D1GPBF MOSFET Transistor

The IRF7524D1GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7524D1GPBF transistor as follows.

IRF7524D1GPBF Transistor Specification

Transistor Code		IRF7524D1GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		0.7V
Total Gate Charge		5.4nC

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