IRF7524D1 MOSFET Transistor

The IRF7524D1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7524D1 transistor as follows.

IRF7524D1 Transistor Specification

Transistor Code		IRF7524D1
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		5.4nC

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