IRF7477 MOSFET Transistor

The IRF7477 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7477 transistor as follows.

IRF7477 Transistor Specification

Transistor Code		IRF7477
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		25nC

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