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IRF7471 MOSFET Transistor

The IRF7471 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7471 transistor as follows.

Circuit diagram symbol of the IRF7471 transistor

IRF7471 Transistor Specification

Transistor Code IRF7471
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 700pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.7nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 21nC

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