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IRF7469PBF MOSFET Transistor

The IRF7469PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7469PBF transistor as follows.

Circuit diagram symbol of the IRF7469PBF transistor

IRF7469PBF Transistor Specification

Transistor Code IRF7469PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.017Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 480pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.2nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 15nC

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