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IRF7467 MOSFET Transistor

The IRF7467 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7467 transistor as follows.

Circuit diagram symbol of the IRF7467 transistor

IRF7467 Transistor Specification

Transistor Code IRF7467
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 706pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.5nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 21nC

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