IRF7466PBF MOSFET Transistor

The IRF7466PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7466PBF transistor as follows.

IRF7466PBF Transistor Specification

Transistor Code		IRF7466PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.8nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		16nC

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