IRF7459PBF MOSFET Transistor

The IRF7459PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7459PBF transistor as follows.

IRF7459PBF Transistor Specification

Transistor Code		IRF7459PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1030pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		23nC

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