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IRF7455PBF-1 MOSFET Transistor

The IRF7455PBF-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7455PBF-1 transistor as follows.

Circuit diagram symbol of the IRF7455PBF-1 transistor

IRF7455PBF-1 Transistor Specification

Transistor Code IRF7455PBF-1
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 870pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 37nC

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