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IRF7452QPBF MOSFET Transistor

The IRF7452QPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7452QPBF transistor as follows.

Circuit diagram symbol of the IRF7452QPBF transistor

IRF7452QPBF Transistor Specification

Transistor Code IRF7452QPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 5.5V
Total Gate Charge 33nC

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