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IRF744PBF MOSFET Transistor

The IRF744PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF744PBF transistor as follows.

Circuit diagram symbol of the IRF744PBF transistor

IRF744PBF Transistor Specification

Transistor Code IRF744PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 450V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.63Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 370pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 80nC

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