IRF7416QPBF MOSFET Transistor

The IRF7416QPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7416QPBF transistor as follows.

IRF7416QPBF Transistor Specification

Transistor Code		IRF7416QPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		890pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		49nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		61nC

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