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IRF7410PBF MOSFET Transistor

The IRF7410PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7410PBF transistor as follows.

Circuit diagram symbol of the IRF7410PBF transistor

IRF7410PBF Transistor Specification

Transistor Code IRF7410PBF
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 12V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 2344pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 0.9V
Total Gate Charge 91nC

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