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IRF7379 MOSFET Transistor

The IRF7379 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7379 transistor as follows.

Circuit diagram symbol of the IRF7379 transistor

IRF7379 Transistor Specification

Transistor Code IRF7379
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 2.5W

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