IRF7353D1PBF MOSFET Transistor

The IRF7353D1PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7353D1PBF transistor as follows.

IRF7353D1PBF Transistor Specification

Transistor Code		IRF7353D1PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.9nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		22nC

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