IRF7343QPBF MOSFET Transistor

The IRF7343QPBF is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7343QPBF transistor as follows.

IRF7343QPBF Transistor Specification

Transistor Code		IRF7343QPBF
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		26nC

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