IRF7316QPBF MOSFET Transistor

The IRF7316QPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7316QPBF transistor as follows.

IRF7316QPBF Transistor Specification

Transistor Code		IRF7316QPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.058Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		23nC

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