IRF7313QPBF MOSFET Transistor

The IRF7313QPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7313QPBF transistor as follows.

IRF7313QPBF Transistor Specification

Transistor Code		IRF7313QPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.9nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		22nC

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