IRF730AS MOSFET Transistor

The IRF730AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF730AS transistor as follows.

IRF730AS Transistor Specification

Transistor Code		IRF730AS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	74W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		22nC

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